TC7WG125FC Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – CMOS Digital Integrated Circuit Silicon Monolithic Dual Bus Buffer with 3-STATE Output

TC7WG125FC
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7WG125FC
Dual Bus Buffer with 3-STATE Output
Features
• High-level output current: I_OH/I_OL = ±8 mA (min)
at V_CC = 3 V
• High-speed operation: t_pd = 2.5 ns (typ.)
at V_CC = 3.3 V,15pF
• Operating voltage range: V_CC = 0.9~3.6 V
• 5.5-V tolerant inputs
• 3.6-V power down protection outputs
TC7WG125FC
CSON8-P-0.4
Weight: 0.002 g (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Value
Unit
Power supply voltage
V_CC
−0.5~4.6
V
DC input voltage
V_IN
−0.5~7.0
V
DC output voltage
V_OUT
−0.5~4.6 (Note 1)
V
−0.5~V_CC + 0.5 (Note 2)
Input diode current
I_IK
−20
mA
Output diode current
I_OK
−20 (Note 3) mA
DC output current
I_OUT
±25
mA
DC V_CC/GND current
I_CC
±100
mA
Power dissipation
P_D
150 (Note 4) mW
Storage temperature
T_stg
−65~150
°C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: V_CC = 0 V
Note 2: High or Low State.
I_OUT absolute maximum rating must be observed.
Note 3: V_OUT < GND
Note 4: Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 11.56 mm²)
Marking
G125
Product name
Pin Assignment ( top view )
Vcc G2 Y1 A2
8765
1234
G1 A1 Y2 GND
1
2007-11-01