TC7WG00FU Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – CMOS Digital Integrated Circuit Silicon Monolithic Dual 2-Input NAND Gate

TC7WG00FU/FK
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7WG00FU,TC7WG00FK
Dual 2-Input NAND Gate
Features
• High-level output current: I_OH/I_OL = ±8 mA (min)
at V_CC = 3 V
• High-speed operation: t_pd = 2.5 ns (typ.)
at V_CC = 3.3 V,15pF
• Operating voltage range: V_CC = 0.9~3.6 V
• 5.5-V tolerant inputs
• 3.6-V power down protection outputs
TC7WG00FU
Marking
TC7WG00FK
SM8
Product name
US8
G 00
Lot No.
WG
00
Absolute Maximum Ratings (Ta = 25°C)
Weight
SSOP8-P-0.65 : 0.02 g (typ.)
SSOP8-P-0.50A : 0.01 g (typ.)
Pin Assignment (top view)
Characteristics
Symbol
Value
Unit
Power supply voltage
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC V_CC / ground current
Power dissipation
Storage temperature
V_CC
−0.5~4.6
V
V_IN
−0.5~7.0
V
−0.5~4.6 (Note 1)
V_OUT
V
−0.5~V_CC + 0.5 (Note 2)
I_IK
−20
mA
I_OK
−20 (Note 3) mA
I_OUT
±25
mA
I_CC
±50
mA
P_D
300 (SM8)
200 (US8)
mW
T_stg
−65~150
°C
1A 1
1B 2
2Y 3
GND 4
8 V_CC
7 1Y
6 2B
5 2A
Note:
Note 1:
Note 2:
Note 3:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
V_CC = 0V
High or Low State. I_OUT absolute maximum rating must be observed.
V_OUT < GND
1
2007-11-01