TC7WG00FC Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – CMOS Digital Integrated Circuit Silicon Monolithic Dual 2-Input NAND Gate

TC7WG00FC
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7WG00FC
Dual 2-Input NAND Gate
Features
• High-level output current: I_OH/I_OL = ±8 mA (min)
at V_CC = 3 V
• High-speed operation: t_pd = 2.5 ns (typ.)
at V_CC = 3.3 V,15pF
• Operating voltage range: V_CC = 0.9~3.6 V
• 5.5-V tolerant inputs
• 3.6-V power down protection outputs
TC7WG00FC
CSON8-P-0.4
Weight: 0.002g (typ.)
Absolute Maximum Ratings ( Ta = 25°C )
Characteristics
Power supply voltage
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC V_CC/GND current
Power dissipation
Storage temperature
Symbol
V_CC
V_IN
V_OUT
I_IK
I_OK
I_OUT
I_CC
P_D
T_stg
Value
Unit
−0.5~4.6
V
−0.5~7.0
V
−0.5~4.6 (Note 1)
V
−0.5~V_CC + 0.5 (Note 2)
−20
mA
−20 (Note 3) mA
±25
mA
±50
mA
150 (Note 4) mW
−65~150
°C
Marking
G00
Product name
Pin Assignment (top view)
Vcc 1Y 2B 2A
8765
Note:
Note 1:
Note 2:
Note 3:
Note 4:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
V_CC = 0V
High or Low State.
I_OUT absolute maximum rating must be observed.
V_OUT < GND
Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 11.56 mm²)
1234
1A 1B 2Y GND
1
2007-11-01