TC7SZU04AFE_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Inverter

Inverter
TC7SZU04AFE
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SZU04AFE
Features
• High output drive: ±16 mA (typ.)
@V_CC = 3 V
• Low quiescent power: I_CC < 2 μA (max)
@V_CC = 5.5 V, Ta = 25°C
• Operation voltage range: V_{CC (opr)} = 1.8~5.5 V
• Supply voltage data retention: V_CC = 1.5~5.5 V
• Latch-up performance: ±500 mA
• ESD performance: Human body model > ±2000 V
Machine model > ±200 V
• Power down protection is provided on all inputs.
Weight: 0.003 g (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Supply voltage range
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC V_CC/ground current
Power dissipation
Storage temperature
Lead temperature (10 s)
V_CC
V_IN
V_OUT
I_IK
I_OK
I_OUT
I_CC
P_D
T_stg
T_L
−0.5~6
V
−0.5~6
V
−0.5~V_CC + 0.5
V
±20
mA
±20
mA
±50
mA
±50
mA
150
mW
−65~150
°C
260
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2007-11-01