TC7SZ32AFE_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – 2 Input OR Gate

TC7SZ32AFE
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SZ32AFE
2 Input OR Gate
Features
• High output drive: ±24 mA (typ.)
@V_CC = 3 V
• Super high speed operation: t_PD 2.4 ns (typ.)
@V_CC = 5 V, 50 pF
• Operation voltage range: V_{CC (opr)} = 1.8~5.5 V
• Supply voltage data retention: V_CC = 1.5~5.5 V
• Latch-up performance: ±500 mA
• ESD performance: Human body model > ±2000 V
Machine model > ±200 V
• Power down protection is provided on all inputs.
Weight: 0.003 g (typ.)
• Matches the performance of TC74LCX series when operated at 3.3 V V_CC
• Input rise and fall time (tr, tf) (recommended operation condition)
@V_CC = 1.8 V, 2.5 V ± 0.2 V: 0~20 ns/V
@V_CC = 3.3 V ± 0.3 V: 0~10 ns/V
@V_CC = 5.5 V ± 0.5 V: 0~5 ns/V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Supply voltage range
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC V_CC/ground current
Power dissipation
Storage temperature
Lead temperature (10 s)
V_CC
V_IN
V_OUT
I_IK
I_OK
I_OUT
I_CC
P_D
T_stg
T_L
−0.5~6
V
−0.5~6
V
−0.5~V_CC + 0.5
V
±20
mA
±20
mA
±50
mA
±50
mA
150
mW
−65~150
°C
260
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2007-11-01