TC7SZ125AFE Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC7SZ125AFE
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SZ125AFE
Dual Bus Buffer 3-State Output
Features
· High output drive: ±24 mA (min) ＠VCC = 3 V
· Super high speed operation: tpd 2.6 ns (typ.)
ï¼ VCC = 5 V, 50pF
· Operation voltage range: VCC (opr) = 1.8~5.5 V
· Latch-up performance: ±500 mA or more
· ESD performance: ±200 V or more (JEITA)
±2000 V or more (MIL)
· Power down protection is provided on all inputs and outputs.
· Matches the performance of TC74LCX series when operated
at 3.3 V VCC.
Weight: 0.003 g (typ.)
Marking
Pin Assignment (top view)
RB
Type name
Maximum Ratings (Ta = 25°C)
G1
IN A 2
GND 3
Characteristics
Power supply voltage
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC V_CC/ground current
Power dissipation
Storage temperature
Lead temperature (10s)
Symbol
V_CC
V_IN
V_OUT
I_IK
I_OK
I_OUT
I_CC
P_D
T_stg
T_L
Rating
Unit
-0.5~6
V
-0.5~6
V
-0.5~V_CC + 0.5
V
-20
mA
±20
mA
±50
mA
±50
mA
150
mW
-65~150
°C
260
°C
5 V_CC
4 OUT Y
1
2002-01-16