TC7SZ00AFE_07 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – 2 Input NAND Gate

TC7SZ00AFE
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SZ00AFE
2 Input NAND Gate
Features
• High output drive: ±24 mA (min) at V_CC = 3 V
• Super high speed operation: t_PD = 2.4 ns (typ.)
•
at V_CC = 5 V, 50 pF
• Operation voltage range: V_{CC (opr)} = 1.8~5.5 V
• Supply voltage data retention: V_CC = 1.5~5.5 V
• 5.5-V tolerant inputs.
• Matches the performance of TC74LCX series when operated at
3.3-V V_CC
Weight: 0.003 g (typ.)
(ESV)
Marking
R1
Product name
Pin Assignment (top view)
IN B 1
IN A 2
5 V_CC
GND 3
4 OUT Y
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Supply voltage range
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC V_CC/ground current
Power dissipation
Storage temperature
Lead temperature (10 s)
Symbol
V_CC
V_IN
V_OUT
I_IK
I_OK
I_OUT
I_CC
P_D
T_stg
T_L
Rating
Unit
−0.5~6
V
−0.5~6
V
−0.5~V_CC + 0.5
V
−20
mA
±20
mA
±50
mA
±50
mA
150
mW
−65~150
°C
260
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2007-11-01