TC7SH17F Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Schmitt Buffer

TC7SH17F/FU
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SH17F, TC7SH17FU
Schmitt Buffer
Features
• High speed operation : t_pd = 5.5 ns (typ.)
at V_CC = 5 V, C_L = 15 pF
• Low power dissipation : I_CC= 2μA (max) at Ta = 25°C
• Wide operating voltage range: V_CC = 2 to 5.5 V
• High noise immunity : V_NIH = V_NIL = 28% V_CC (min)
• 5.5-V tolerant input
TC7SH17F
TC7SH17FU
Marking
Product name
HL
Weight
SSOP5-P-0.95 : 0.016 g (typ.)
SSOP5-P-0.65A : 0.006 g (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit ^{Pin Assignment (top view)}
Supply voltage
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC V_CC/ground current
Power dissipation
Storage temperature
Lead temperature (10 s)
V_CC
V_IN
V_OUT
I_IK
I_OK
I_OUT
I_CC
P_D
T_stg
T_L
−0.5 to 7
V
−0.5 to 7
V
−0.5 to V_CC + 0.5
V
−20
mA
±20 (Note 1) mA
±25
mA
±50
mA
200
mW
−65 to 150
°C
260
°C
NC 1
IN A 2
GND 3
5 V_CC
4 OUT Y
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note1: V_OUT <GND, V_OUT > V_CC
1
2009-09-24