TC7SH08FUTE85LF Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – 2-Input AND Gate

TC7SH08F/FU
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SH08F, TC7SH08FU
2-Input AND Gate
Features
• High speed operation : t_pd = 4.3ns (typ.) at V_CC = 5V, 15pF
• Low power dissipation : I_CC = 2 μA (max) at Ta = 25°C
• High noise immunity : V_NIH = V_NIL = 28% V_CC (min)
• 5.5-V tolerant inputs
• Wide operating voltage range : V_CC = 2 to 5.5 V
TC7SH08F
Marking
Product name
TC7SH08FU
(SMV)
H2
Absolute Maximum Ratings (Ta = 25°C)
Weight
SSOP5-P-0.95 : 0.016 g (typ.)
SSOP5-P-0.65A : 0.006 g (typ.)
(USV)
Characteristics
Supply voltage
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC V_CC/ground current
Power dissipation
Storage temperature
Lead temperature (10 s)
Symbol
Rating
Unit
V_CC
V_IN
V_OUT
I_IK
I_OK
I_OUT
I_CC
P_D
T_stg
T_L
− 0.5 to 7
V
− 0.5 to 7
V
− 0.5 to V_CC + 0.5
V
− 20
mA
± 20 (Note1) mA
± 25
mA
± 50
mA
200
mW
− 65 to 150
°C
260
°C
Pin Assignment (top view)
IN B 1
IN A 2
GND 3
5 V_CC
4 OUT Y
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note1: V_OUT < GND, V_OUT > V_CC
1
2009-09-09