TC7SH02F_09 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – 2-Input NOR Gate

TC7SH02F/FU
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SH02F, TC7SH02FU
2-Input NOR Gate
Features
• High Speed Operation : t_pd = 3.6 ns (typ.)
at V_CC = 5 V, 15 pF
• Low Power Dissipation : I_CC = 2μA (max) at Ta = 25°C
• Balanced Propagation Delays : t_pLH ≒ t_pHL
• High noise immunity : V_NIH = V_NIL =28% V_CC (min)
• 5.5-V Tolerant Inputs
• Wide Operating Voltage Range : V_CC = 2 to 5.5V
Marking
Product name
TC7SH02F
TC7SH02FU
H3
Absolute Maximum Ratings (Ta = 25°C)
Weight
SSOP5-P-0.95
SSOP5-P-0.65A
: 0.016 g (typ.)
: 0.006 g (typ.)
Characteristics
Supply Voltage
DC Input Voltage
DC Output Voltage
Input Diode Current
Output Diode Current
DC Output Current
DC V_CC/Ground Current
Power Dissipation
Storage Temperature
Lead Temperature(10s)
Symbol
V_CC
V_IN
V_OUT
I_IK
I_OK
I_OUT
I_CC
P_D
T_stg
T_L
Rating
Unit
− 0.5 to 7
V
− 0.5 to 7
V
− 0.5 to V_CC + 0.5
V
− 20
mA
± 20 (Note 1) mA
± 25
mA
± 50
mA
200
mW
− 65 to 150
°C
260
°C
Pin Assignment (top view)
IN B 1
IN A 2
GND 3
5 V_CC
4 OUT Y
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note1: V_OUT < GND, V_OUT > V_CC
1
2009-09-09