TC7SH00FS Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – 2 Input NAND Gate

TC7SH00FS
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SH00FS
2 Input NAND Gate
Features
• High speed: t_pd = 3.7 ns (typ.) at V_CC = 5 V, 15 pF
• Low power dissipation: I_CC = 2 μA (max) at Ta = 25°C
• High noise immunity: V_NIH = V_NIL = 28% V_CC (min)
• Wide operating voltage range: V_CC (opr.) = 2~5.5 V
• 5.5-V tolerant inputs
SON5-P-0.35
Weight : 0.001 g (Typ.)
(fSV)
Marking
H1
Product Name
Pin Assignment (top view)
IN A 1
GND 2
IN B 3
5 V_CC
4 OUT Y
Absolute Maximum Ratings ( Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Supply voltage range
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC V_CC/ground current
Power dissipation
Storage temperature
V_CC
V_IN
V_OUT
I_IK
I_OK
I_OUT
I_CC
P_D
T_stg
−0.5~7
V
−0.5~7
V
−0.5~V_CC + 0.5
V
−20
mA
±20
mA
±25
mA
±50
mA
50
mW
−65~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01