TC7SH00FE Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – 2 Input NAND Gate

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SH00FE
TC7SH00FE
2 Input NAND Gate
Features
• Super high speed operation : t_PD = 3.7 ns (typ.)
@V_CC = 5 V
• Low power dissipation : I_CC = 2 µA (Max.)
@ Ta = 25°C
• High noise immunity : V_NIH = V_NIH
= 28% V_CC (Min.)
• 5.5V tolerant input.
• _{Wide operation} voltage range : V_CC (opr) = 2~5.5 V
Weight: 0.003 g (typ.)
Marking
H1
Type name
Pin Assignment (top view)
IN B 1
IN A 2
GND 3
5 V_CC
4 OUT Y
Maximum Ratings (Ta = 25°C)
Characteristics
Supply voltage range
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC V_CC/ground current
Power dissipation
Storage temperature
Symbol
V_CC
V_IN
V_OUT
I_IK
I_OK
I_OUT
I_CC
P_D
T_stg
Rating
−0.5~7
−0.5~7
−0.5~V_CC + 0.5
−20
±20
±25
±50
150
−65~150
1
Unit
V
V
V
mA
mA
mA
mA
mW
°C
2004-06-21