TC7SG14FE_09 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC7SG14FE
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SG14FE
Schmitt Inverter
Features
• High output current
: ±8 mA (min) at V_CC = 3.0 V
• Super high speed operation : t_pd = 3.7 ns (typ.)
at V_CC = 3.3 V, 15pF
• Operating voltage range : V_CC = 0.9 to 3.6 V
• 5.5-V tolerant input.
• 3.6-V power down protection output.
Weight: 0.003 g (typ.)
(ESV)
Marking
Pin Assignment (top view)
WA
Product name
NC 1
IN A 2
5 V_CC
GND 3
4 OUT Y
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Supply voltage
V_CC
−0.5 to 4.6
V
DC input voltage
V_IN
−0.5 to 7.0
V
DC output voltage
−0.5 to 4.6 (Note 1)
V_OUT
V
−0.5 to V_CC + 0.5 (Note 2)
Input diode current
I_IK
−20
mA
Output diode current
I_OK
−20 (Note 3)
mA
DC output current
I_OUT
±25
mA
DC V_CC/ground current
I_CC
±50
mA
Power dissipation
P_D
150
mW
Storage temperature
T_stg
−65 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: V_CC=0V
Note 2: High or Low state. Do not exceed I_OUT of absolute maximum ratings.
Note 3: V_OUT<GND
1
2009-09-18