TC7SG125FE_09 Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – Bus Buffer with 3-STATE Output

TC7SG125FE
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SG125FE
Bus Buffer with 3-STATE Output
Features
• High output current:
±8 mA (min) at V_CC = 3.0 V
• High-speed operation:
t_pd = 2.4 ns (typ.)
at V_CC = 3.3 V,15pF
• Operating voltage range: V_CC = 0.9 to 3.6 V
• 5.5-V tolerant inputs.
• 3.6-V power down protection output.
Marking
WB
Product name
Weight: 0.003 g (typ.)
Pin Assignment (top view)
G1
IN A 2
5 V_CC
(ESV)
GND ³
4 OUT Y
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Supply voltage
DC input voltage
DC output voltage
Output diode current
DC output current
DC V_CC/ground current
Power dissipation
Storage temperature
Power supply voltage
V_CC
V_IN
V_OUT
I_IK
I_OK
I_OUT
I_CC
P_D
T_stg
−0.5 to 4.6
V
−0.5 to 7.0
V
−0.5 to 4.6 (Note 1)
V
−0.5 to V_CC + 0.5 (Note 2)
−20
mA
−20 (Note 3)
mA
±25
mA
±50
mA
150
mW
−65 to 150
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: V_CC = 0V
Note 2: High or Low State. Do not exceed I_OUT of absolute maximum ratings.
Note 3: V_OUT < GND
1
2009-09-18