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TC7SG125FE Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – Bus Buffer with 3-STATE Output | |||
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TC7SG125FE
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SG125FE
Bus Buffer with 3-STATE Output
Features
⢠High-level output current: IOH/IOL = ±8 mA (min)
at VCC = 3.0 V
⢠High-speed operation: tpd = 2.4 ns (typ.)
at VCC = 3.3 V,15pF
⢠Operating voltage range: VCC = 0.9~3.6 V
⢠5.5-V tolerant inputs.
⢠3.6-V power down protection output.
Marking
WB
Product name
質é: 0.003 g (æ¨æº)
Pin Assignment (top view)
G1
IN A 2
5 VCC
(ESV)
GND 3
4 OUT Y
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Value
Unit
Power supply voltage
DC input voltage
DC output voltage
Output diode current
DC output current
DC VCC/ground current
Power dissipation
Storage temperature
Power supply voltage
VCC
VIN
VOUT
IIK
IOK
IOUT
ICC
PD
Tstg
â0.5~4.6
V
â0.5~7.0
V
â0.5~ 4.6 (Note 1)
V
â0.5~ VCC + 0.5 (Note 2)
â20
mA
â20 (Note 3)
mA
±25
mA
±50
mA
200
mW
â65~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: VCC = 0V
Note 2: High or Low State. IOUT abusolute maximum rating must be observed.
Note 3: VOUT < GND
1
2007-11-01
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