TC7SG02FE Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – 2 Input NOR Gate

TC7SG02FE
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SG02FE
2 Input NOR Gate
Features
• High-level output current: I_OH/I_OL = ±8 mA (min)
at V_CC = 3.0 V
• High-speed operation: t_pd = 2.4 ns (typ.)
at V_CC = 3.3 V,15pF
• Operating voltage range: V_CC = 0.9~3.6 V
• 5.5-V tolerant inputs.
• 3.6-V power down protection output.
Weight: 0.003 g (typ.)
(ESV)
Marking
W3
Product name
Pin Assignment (top view)
IN B 1
5 V_CC
IN A 2
GND 3
4 OUT Y
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Value
Unit
Power supply voltage
DC input voltage
DC output voltage
V_CC
−0.5~4.6
V
V_IN
−0.5~7.0
V
−0.5~ 4.6 (Note 1)
V_OUT
−0.5~ V_CC + 0.5 (Note 2)
V
Input diode current
I_IK
−20
mA
Output diode current
I_OK
−20 (Note 3)
mA
DC output current
I_OUT
±25
mA
DC V_CC/ground current
I_CC
±50
mA
Power dissipation
Storage temperature
P_D
150
mW
T_stg
−65~150
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: V_CC = 0V
Note 2: High or Low State. I_OUT absolute maximum rating must be observed.
Note 3: V_OUT < GND
1
2007-11-01