TC7SET32F_09 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC7SET32F/FU
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SET32F, TC7SET32FU
2-INPUT OR GATE
Features
• High speed
: t_pd = 4.2 ns (typ.)
at V_CC = 5 V, C_L = 15pF
• Low power dissipation
: I_CC = 2 μA (max) at Ta = 25°C
• Compatible with TTL outputs : V_IL=0.8V (max)
V_IH=2.0V (min)
• 5.5-V tolerant ll inputs.
• Balanced propagation Delays : t_pLH≒t_pHL
Marking
Product Name
TC7SET32F
TC7SET32FU
(SMV)
G4
(USV)
Absolute Maximum Ratings (Ta = 25°C)
Weight
SSOP5-P-0.95 : 0.016 g (typ.)
SSOP5-P-0.65A : 0.006 g (typ.)
Characteristics
Supply voltage
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC V_CC/ground current
Power dissipation
Storage temperature
Lead temperature (10 s)
Symbol
Rating
Unit _{Pin Assignment (top view)}
V_CC
−0.5 to 7.0
V
V_IN
−0.5 to 7.0
V
V_OUT
−0.5 to V_CC + 0.5
V
IN B 1
I_IK
−20
mA
I_OK
±20 (Note 1)
mA
IN A 2
I_OUT
±25
mA
I_CC
±50
mA
GND 3
P_D
200
mW
T_stg
−65 to 150
°C
T_L
260
°C
5 V_CC
4 OUT Y
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: V_OUT < GND, V_OUT > V_CC
1
2009-09-29