TC7SET02F_09 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC7SET02F/FU
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SET02F,TC7SET02FU
2 Input NOR Gate
Features
• High speed
: t_pd = 4.2 ns (typ.)
at V_CC = 5 V, C_L = 15pF
• Low power dissipation
: I_CC = 2 μA (max) at Ta = 25°C
• Compatible with TTL outputs : V_IL = 0.8 V (max)
V_IH = 2.0 V (min)
• 5.5-V tolerant inputs
• Balanced Propagation Delays : t_pLH ≒ t_pHL
Marking
Product name
TC7SET02F
TC7SET02FU
(SMV)
G3
(USV)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Supply voltage
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC V_CC/ground current
Power dissipation
Storage temperature
Lead temperature (10s)
Symbol
V_CC
V_IN
V_OUT
I_IK
I_OK
I_OUT
I_CC
P_D
T_stg
T_L
Rating
−0.5 to 7.0
−0.5 to 7.0
−0.5 to V_CC + 0.5
−20
±20 (Note 1)
±25
±50
200
−65 to 150
260
Weight
SSOP5-P-0.95 : 0.016 g (typ.)
SSOP5-P-0.65A : 0.006 g (typ.)
Unit
Pin Assignment
(t i )
V
V
V
IN B 1
5 V_CC
mA
mA
IN A 2
mA
mA
GND 3
4 OUT Y
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note1: V_OUT <GND, V_OUT > V_CC
1
2009-09-30