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TC7SBD384FU Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SBD384FU
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SBD384FU
Single Bus Switch with Level Shifting
The TC7SBD384FU provides single bit of high-speed
TTL-compatible switching. The low on resistance of the switch
allows connections to be made with minimal propagation delay.
The device is organized as just 1-bit low-impedance switch with
output-enable (OE) input. When OE is low, the switch is on and
data can flow from port A to port B, or vice versa. When OE is
high, the switch is open and a high-impedance state exists
between the two ports.
The internal diode which adds to power supply line is enable to
realize the shift of signal level from 5 V to 3.3 V. (Note 1)
All inputs are equipped with protection circuits against static
discharge.
Features
• Operating voltage: VCC = 4.5~5.5 V
• High speed operation: tpd = 0.25 ns (max)
• Low on resistance: RON = 5 Ω (typ.)
• ESD performance: Machine model > ±200 V
Human body model > ±2000 V
• TTL level input (control input)
• Package: USV
Weight: 0.006 g (typ.)
Note 1: In case that over-shoot noise is detected, this device should be used with clamp diode to prevent the next
stage device from over-stress.
Pin Assignment (top view)
VCC
OE
5
4
JH
123
A B GND
1
2001-12-04