TC7SAU04F Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC7SAU04F/FU
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SAU04F,TC7SAU04FU
Inverter (unbuffer) with 3.6 V Tolerant Input
Features
· Low voltage operation : VCC = 1.8~3.6 V
· Low power disipation : ICC < 20 µA (max)
·
(VCC = 3.6 V, Ta = −40~85°C)
· High speed operation : tpd = 3.5 ns (max) (VCC = 3.0~3.6 V)
: tpd = 4.2 ns (max) (VCC = 2.3~2.7 V)
: tpd = 8.4 ns (max) (VCC = 1.8 V)
· High Output current : IOH/IOL = ±24 mA (min) (VCC = 3.0 V)
: IOH/IOL = ±18 mA (min) (VCC = 2.3 V)
: IOH/IOL = ±6 mA (min) (VCC = 1.8 V)
· Latch-up performance : ±300 mA or more
· ESD performance : Human body model > ±200 V
: Machine model > ±2000 V
· Power down protection is provided on all inputs and outputs.
TC7SAU04F
TC7SAU04FU
Maximum Ratings (Ta = 25°C)
Weight
SSOP5-P-0.95 : 0.016 g (typ.)
SSOP5-P-0.65A : 0.006 g (typ.)
Characteristics
Symbol
Rating
Unit
Power supply voltage
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
Power dissipation
DC V_CC/ground current
Storage temperature range
V_CC
V_IN
V_OUT
I_IK
I_OK
I_OUT
P_D
I_CC
T_stg
−0.5~4.6
V
−0.5~4.6
V
−0.5~V_CC + 0.5 (Note 1)
V
−50
mA
±50 (Note 2) mA
±50
mA
200
mW
±100
mA
−65~150
°C
Note 1: High or low state. I_OUT absolute maximum rating be observed.
Note 2: V_OUT < GND, V_OUT > V_CC
1
2002-12-13