TC7S66F_09 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC7S66F/FU
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7S66F,TC7S66FU
Bilateral Switch
The TC7S66 is a high Speed C²MOS Bilateral Switch fabricated
with silicon gate C²MOS technology.
It consists of a high speed switch capable of controlling either
digital or analog signals while maintaining the C²MOS low power
dissipation.
Control input (C) is provided to control the switch.
The switch turns ON while the C input is high, and the switch
turns OFF while low.
Input is equipped with protection circuits against static
discharge or transient excess voltage.
Features
• High speed: t_pd = 7 ns (typ.) @V_CC = 5 V
• Low power dissipation: I_CC = 1 μA (max) @Ta = 25°C
• High noise immunity: V_NIH = V_NIL = 28% V_CC (min)
• Low ON resistance: R_ON = 100 Ω (typ.) @V_CC = 9 V
• Low T.H.D: THD = 0.05% (typ.) @V_CC = 5 V
• Pin and function compatible with TC4S66F
Absolute Maximum Ratings (Ta = 25°C)
TC7S66F
TC7S66FU
Weight
SSOP5-P-0.95 : 0.016 g (typ.)
SSOP5-P-0.65A : 0.006 g (typ.)
Characteristics
Symbol
Rating
Unit
DC Supply voltage
Control input voltage
Switch I/O voltage
Control diode current
Output diode current
Through I/O current
DC V_CC/ground current
Power dissipation
Storage temperature range
Lead temperature (10 s)
V_CC
V_IN
V_I/O
I_CK
I_OK
I_T
I_CC
P_D
T_stg
T_L
−0.5 to 13
V
−0.5 to V_CC + 0.5
V
−0.5 to V_CC + 0.5
V
±20
mA
±20
mA
±12.5
mA
±25
mA
200
mW
−65 to 150
°C
260
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2009-09-30