TC7PH34FE_09 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC7PH34FE
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7PH34FE
Dual NON-Inverter
Features
• Operating voltage range : V_CC = 2.0 to 5.5 V
• High-speed operation : t_pd = 3.8 ns (typ.)
at V_CC = 5 V, C_L = 15 pF
• Low power dissipation : I_CC = 2 μA (max) at Ta = 25℃
• High noise immunity
: V_NIH = V_NIL = 28% V_CC (min)
• 5.5-V tolerant inputs
S ON6-P-0.50
Weight: 0.003g (typ.)
(ES6)
Marking
HAF
Product name
Pin Assignment (top view)
1A 1
6 1Y
GND 2
2A 3
5 V_CC
4 2Y
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Supply voltage
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC V_CC/ground current
Power dissipation
Storage temperature
V_CC
V_IN
V_OUT
I_IK
I_OK
I_OUT
I_CC
P_D
T_stg
−0.5 to 7.0
V
−0.5 to 7.0
V
−0.5 to V_CC + 0.5
V
−20
mA
±20 (Note 1) mA
±25
mA
±50
mA
150
mW
−65 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: V_OUT < GND, V_OUT > V_CC
1
2009-09-24