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TC7PG34FU Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic | |||
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TC7PG34FU
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7PG34FU
Dual NON-Inverter
Features
⢠High output current
: ±8 mA (min) at VCC = 3 V
⢠Super high speed operation : tpd = 2.8 ns (typ.)
at VCC = 3.3 V, 1 CL = 5 pF
⢠Operating voltage range : VCC = 0.9 to 3.6 V
⢠5.5-V tolerant inputs
⢠3.6-V power down protection outputs
⢠ESD performance
: Machine model ⥠±200 V
Human body model ⥠±2000 V
Weight : 6.8 mg (typ.)
Marking
Pin Assignment (top view)
(US6)
GBF
Product Name
1A 1
GND 2
2A 3
6 1Y
2
5 VCC
4 2Y
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Supply voltage
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC VCC/GND current
Power dissipation
Storage temperature
VCC
VIN
VOUT
IIK
IOK
IOUT
ICC
PD
Tstg
â 0.5 to 4.6
V
â 0.5 to 7.0
V
â 0.5 to 4.6 (Note 1)
V
â0.5 to VCC + 0.5 (Note 2)
â20
mA
â20
(Note 3)
mA
± 25
mA
±100
mA
200
mW
â65 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: VCC = 0 V
Note 2: High or Low State. Do not exceed IOUT of absolute maximum ratings.
Note 3: VOUT < GND
1
2011-02-14
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