TC7PG04FU Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

Dual Inverter
TC7PG04FU
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7PG04FU
Features
• High output current
: ±8 mA (min) at V_CC = 3 V
• Super high speed operation : t_pd = 2.8 ns (typ.)
at V_CC = 3.3 V, 15 pF
• Operating voltage range : V_CC = 0.9 to 3.6 V
• 5.5-V tolerant inputs
• 3.6-V power down protection outputs
Weight : 0.0068 g (typ.)
Marking
Pin Assignment (top view)
(US6)
GB5
Product Name
1A 1
GND 2
6 1Y
5 V_CC
2A 3
4 2Y
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Supply voltage
V_CC
− 0.5 to 4.6
V
DC input voltage
V_IN
− 0.5 to 7.0
V
DC output voltage
V_OUT
− 0.5 to 4.6 (Note 1)
V
−0.5 to V_CC + 0.5 (Note 2)
Input diode current
I_IK
−20
mA
Output diode current
I_OK
−20
(Note 3) mA
DC output current
I_OUT
± 25
mA
DC V_CC/GND current
I_CC
±100
mA
Power dissipation
P_D
150
mW
Storage temperature
T_stg
−65 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: V_CC = 0 V
Note 2: High or Low State. Do not exceed I_OUT of absolute maximum ratings.
Note 3: V_OUT < GND
1
2009-09-18