TC7PG04AFE Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Dual Inverter

Dual Inverter
TC7PG04AFE
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7PG04AFE
Features
• High-level output current: I_OH/I_OL = ±8 mA (min)
at V_CC = 3 V
• High-speed operation: t_pd = 2.8 ns (typ.)
at V_CC = 3.3 V, 15pF
• Operating voltage range: V_CC = 0.9~3.6 V
• 5.5-V tolerant inputs
SON6-P-0.50
Weight: 0.003 g (typ.)
Marking
Pin Assignment (top view)
(ES6)
GA5
Product name
1A 1
GND 2
2A 3
6 1Y
5 ^VCC
4 2Y
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Value
Unit
Power supply voltage
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC V_CC/GND current
Power dissipation
Storage temperature
V_CC
V_IN
V_OUT
I_IK
I_OK
I_OUT
I_CC
P_D
T_stg
−0.5~4.6
V
−0.5~7.0
V
−0.5~V_CC + 0.5
V
−20
mA
±20 (Note 1) mA
±25
mA
±100
mA
150
mW
−65~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: V_OUT < GND, V_OUT > V_CC
1
2007-11-01