TC75W60FU Datasheet, PDF (1/11 Pages) Toshiba Semiconductor – CMOS Digital Integrated Circuit Silicon Monolithic Dual Operational Amplifier

TC75W60FU/FK
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC75W60FU, TC75W60FK
Dual Operational Amplifier
Features
• High slew rate : SR (V_DD = 3 V) = 5.1 V/μs (typ.)
• Single and dual power Supply operations are possible.
: V_DD = ±0.9 to 3.5 V or 1.8 to 7 V
• Lower supply current than general-purpose bipolar type op amps
: I_DD (V_DD = 3 V) = 660 μA (typ.)
• The internally phase compensated operational amplifier.
• Small package
TC75W60FU
TC75W60FK
Weight
SSOP8-P-0.65 : 0.021 g (typ.)
SSOP8-P-0.50A : 0.01 g (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Supply voltage
Differential input voltage
V_DD, V_SS
7
V
DV_IN
±7
V
Input voltage
V_IN
V_DD to V_SS
V
TC75W60FU
Power dissipation
P_D
TC75W60FK
250
mW
200
Operating temperature
Storage temperature
T_opr
−40 to 85
°C
T_stg
−55 to 125
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01