TC75S55F_07 Datasheet, PDF (1/11 Pages) Toshiba Semiconductor – Single Operational Amplifier

TC75S55F/FU/FE
TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic
TC75S55F,TC75S55FU,TC75S55FE
Single Operational Amplifier
The TC75S55F/TC75S55FU/TC75S55FE is a CMOS single-
operation amplifier which incorporates a phase compensation
circuit. It is designed for use with a low-voltage, low-current
power supply; this differentiates this device from conventional
general-purpose bipolar op-amps.
Features
• Low-voltage operation : V_DD = ±0.9~3.5 V or 1.8~7 V
• Low-current power supply : I_DD (V_DD = 3 V) = 10 μA (typ.)
• Built-in phase-compensated op-amp, obviating the need for
any external device
• Ultra-compact package
TC75S55F
TC75S55FU
TC75S55FE
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Supply voltage
V_DD, V_SS
7
V
Differential input voltage
DV_IN
±7
V
Input voltage
V_IN
V_DD~V_SS
V
Power
dissipation
TC75S55F/FU
TC75S55FE
P_D
200
mW
100
Operating temperature
Storage temperature
T_opr
−40~85
°C
T_stg
−55~125
°C
Weight
SSOP5-P-0.95 : 0.014 g (typ.)
SSOP5-P-0.65A : 0.006 g (typ.)
SON5-P-0.50 : 0.003 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01