TC75S51FUTE85LF Datasheet, PDF (1/10 Pages) Toshiba Semiconductor – Single Operational Amplifier

TC75S51F/FU/FE
TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic
TC75S51F, TC75S51FU, TC75S51FE
Single Operational Amplifier
The TC75S51F/TC75S51FU/TC75S51FE is a CMOS single-
operation amplifier which incorporates a phase compensation
circuit. It is designed with a low-voltage and low-current power
supply; this differentiates this device from general-purpose
bipolar op-amps.
Features
• Low-voltage operation : V_DD = ±0.75 to ±3.5 V or 1.5 to 7 V
• Low-current power supply : I_DD (V_DD = 3 V) = 60 μA (typ.)
• Built-in phase-compensated op-amp, obviating the need for
any external device
• Ultra-compact package
TC75S51F
TC75S51FU
(SMV)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
(USV)
Supply voltage
Differential input voltage
V_DD, V_SS
7
V
DV_IN
±7
V
TC75S51FE
Input voltage
V_IN
V_DD to V_SS
V
Power
dissipation
TC75S51F/FU
TC75S51FE
Operating temperature
200
P_D
mW
100
T_opr
−40 to 85
°C
SON5-P-0.50 (ESV)
Storage temperature
T_stg
−55 to 125
°C
Weight
SSOP5-P-0.95 : 0.014 g (typ.)
Note: Using continuously under heavy loads (e.g. the application
SSOP5-P-0.65A : 0.006 g (typ.)
of high temperature/current/voltage and the significant
SON5-P-0.50 : 0.003 g (typ.)
change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
1993-07
1
2014-03-01