TC74VHC10F_07 Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – Triple 3-Input NAND Gate

TC74VHC10F/FN/FT
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC74VHC10F,TC74VHC10FN,TC74VHC10FT
Triple 3-Input NAND Gate
The TC74VHC10 is an advanced high speed CMOS 3-INPUT
NAND GATE fabricated with silicon gate C²MOS technology.
It achieves the high speed operation similar to equivalent
Bipolar Schottky TTL while maintaining the CMOS low power
dissipation.
The internal circuit is composed of 3 stages including buffer
output, which provide high noise immunity and stable output.
An input protection circuit ensures that 0 to 5.5 V can be
applied to the input pins without regard to the supply voltage.
This device can be used to interface 5 V to 3 V systems and two
supply systems such as battery back up. This circuit prevents
device destruction due to mismatched supply and input voltages.
Features
• High speed: t_pd = 3.9 ns (typ.) at V_CC = 5 V
• Low power dissipation: I_CC = 2 μA (max) at Ta = 25°C
• High noise immunity: V_NIH = V_NIL = 28% V_CC (min)
• Power down protection is provided on all inputs.
• Balanced propagation delays: t_pLH ^∼− t_pHL
• Wide operating voltage range: V_CC (opr) = 2 to 5.5 V
• Pin and function compatible with 74ALS10
Note: xxxFN (JEDEC SOP) is not available in
Japan.
TC74VHC10F
TC74VHC10FN
TC74VHC10FT
Weight
SOP14-P-300-1.27A
SOL14-P-150-1.27
TSSOP14-P-0044-0.65A
: 0.18 g (typ.)
: 0.12 g (typ.)
: 0.06 g (typ.)
1
2007-10-01