TC74HC10AP_07 Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – CMOS Digital Integrated Circuit Silicon Monolithic Triple 3-Input NAND Gate

TC74HC10AP/AF/AFN
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC74HC10AP,TC74HC10AF,TC74HC10AFN
Triple 3-Input NAND Gate
The TC74HC10A is a high speed CMOS 3-INPUT NAND
GATE fabricated with silicon gate C²MOS technology.
It achieves the high speed operation similar to equivalent
LSTTL while maintaining the CMOS low power dissipation.
The internal circuit is composed of 3 stages including buffer
output, which provide high noise immunity and stable output.
All inputs are equipped with protection circuits against static
discharge or transient excess voltage.
Features
• High speed: t_pd = 6 ns (typ.) at V_CC = 5 V
• Low power dissipation: I_CC = 1 μA (max) at Ta = 25°C
• High noise immunity: V_NIH = V_NIL = 28% V_CC (min)
• Output drive capability: 10 LSTTL loads
• Symmetrical output impedance: |I_OH| = I_OL = 4 mA (min)
• Balanced propagation delays: t_pLH ^∼− t_pHL
• Wide operating voltage range: V_CC (opr) = 2 to 6 V
• Pin and function compatible with 74LS10
Pin Assignment
Note: xxxFN (JEDEC SOP) is not available in
Japan.
TC74HC10AP
TC74HC10AF
TC74HC10AFN
IEC Logic Symbol
Weight
DIP14-P-300-2.54
SOP14-P-300-1.27A
SOL14-P-150-1.27
: 0.96 g (typ.)
: 0.18 g (typ.)
: 0.12 g (typ.)
1
2007-10-01