TC58NVG2S0FTA00 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – NAND Flash Memory(SLC Middle Capacity)

NAND Flash Memory(SLC Middle Capacity)
Product list of NAND Flash Memory SLC Middle Capacity
Capacity
bit
Tech.
Node
nm
Page
Size
bit
Block
Size
bit
Power
Supply
V
Operating
Temperature I/O
°C
Package
Part Number
Access Time
Program
/Erase Time
typ.
Serial
cycle
1st Program Erase
access Time Time
min
typ
μs
ms
ns
µs
512M 43
0
to
70
2.7
to
3.6
2048 128K
+64 +4K
×8 ×8
-40
to
85
1.70 to
1.95
TSOP I 48-P-1220- ^{TC58NVM9S3ETA00 25}
25
300
2.5
0.50
TC58NVM9S3ETAI0 25
25
300
2.5
P -TFBGA63-0911 -
TC58NVM9S3EBAI4 25
25
300
2.5
0.80CZ
x8
P -VFBGA67-0608 -
TC58NVM9S3EBAI6 25
25
300
2.5
0.80-001
P -TFBGA63-0911 -
TC58NYM9S3EBAI4 25
25
300
2.5
0.80CZ
P -VFBGA67-0608 -
TC58NYM9S3EBAI6 25
25
300
2.5
0.80-001
0
to
70
2.7
to
3.6
2048 128K
43
+64 +4K
×8 ×8
-40
to
85
1.70 to
1.95
1G
TSOP I 48-P-1220- ^{TC58DVG02D5TA00 25}
25
300
2.5
0.50
TC58DVG02D5TAI0 25
25
300
2.5
P -TFBGA63-0911 -
TC58DVG02D5BAI4 25
25
300
2.5
0.80CZ
x8
P -VFBGA67-0608 -
TC58DVG02D5BAI6 25
25
300
2.5
0.80-001
P -TFBGA63-0911 -
TC58DYG02D5BAI4 25
25
300
2.5
0.80CZ
P -VFBGA67-0608 -
TC58DYG02D5BAI6 25
25
300
2.5
0.80-001