TC58FVT160AFT-70 Datasheet, PDF (1/41 Pages) Toshiba Semiconductor – TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

TC58FVT160/B160AFT/AXB-70,-10
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
16-MBIT (2M × 8 BITS / 1M × 16 BITS) CMOS FLASH MEMORY
DESCRIPTION
The TC58FVT160/B160A is a 16,777,216-bit, 3.0-V read-only electrically erasable and programmable flash
memory organized as 2,097,152 words × 8 bits or as 1,048,576 words × 16 bits. The TC58FVT160/B160A features
commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands
are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip.
FEATURES
• Power supply voltage
• Block erase architecture
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•
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VDD = 2.7 V~3.6 V
Operating temperature
Ta = −40°C~85°C
Organization
2M × 8 bits / 1M × 16 bits
Functions
Auto Program, Auto Erase
Fast Program Mode
Program Suspend/Resume
Erase Suspend/Resume
data polling / Toggle bit
block protection
Automatic Sleep, support for hidden ROM area
common flash memory interface (CFI)
Byte/Word Modes
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1 × 16 Kbytes / 2 × 8 Kbytes
1 × 32 Kbytes / 31 × 64 Kbytes
Boot block architecture
TC58FVT160AFT/AXB: top boot block
TC58FVB160AFT/AXB: bottom boot block
Mode control
Compatible with JEDEC standard commands
Erase/Program cycles
10⁵ cycles typ.
Access time
70 ns
100 ns
(CL: 30 pF)
(CL: 100 pF)
Power consumption
5 µA
30 mA
(Standby)
(Read operation)
15 mA
(Program/Erase operations)
• Package
TC58FVT160/B160AFT:
TSOPI48-P-1220-0.50 (weight: 0.51 g)
TC58FVT160/B160AXB:
P-TFBGA48-0608-0.80AZ (weight: 0.090 g)
000630EBA1
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2002-08-06 1/41