TBD62308AFAG Datasheet, PDF (1/9 Pages) Toshiba Semiconductor – 4channel Low active high current sink type DMOS transistor array

TBD62308AFAG
TOSHIBA BiCD Integrated Circuit Silicon Monolithic
TBD62308AFAG
4channel Low active high current sink type DMOS transistor array
TBD62308AFAG are DMOS transistor array with 4 circuits.
It has a clamp diode for switching inductive loads built-in in
each output. Please be careful about thermal conditions
during use.
Features
• 4 circuits built-in
• High voltage
: VOUT = 50 V (MAX)
• High current
: IOUT = 1.5 A/ch (MAX)
• Input voltage(output on) : VCC - 3.5 V (MAX)
• Input voltage(output off) : VCC - 0.4 V (MIN)
• Package
: P-SSOP24-0613-1.00-001
P-SSOP24-0613-1.00-001
Weight: 0.35 g (Typ.)
Pin connection (top view)
COMMON O4 I4 NC GND GND GND GND NC I3 O3 COMMON
24 23 22 21 20 19 18 17 16 15 14 13
1 2 3 4 5 6 7 8 9 10 11 12
VCC1 O1 I1 NC GND GND GND GND NC I2 O2 VCC2
Pin connection may be simplified for explanatory purpose.
©2016 TOSHIBA Corporation
1
2016-03-08