TBAV99 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Switching Diodes Silicon Epitaxial Planar

Switching Diodes Silicon Epitaxial Planar
TBAV99
1. Applications
• Ultra-High-Speed Switching
2. Packaging and Internal Circuit
TBAV99
SOT23
1: Anode 1
2: Cathode 2
3: Cathode1 / Anode 2
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, T_a = 25 )
Characteristics
Symbol
Note
Rating
Unit
Peak reverse voltage
V_RM
85
V
Reverse voltage
V_R
80
Peak forward current
I_FM
(Note 1)
300
mA
Average rectified current
I_O
(Note 1)
100
Power dissipation
P_D
150
mW
Power dissipation
P_D
(Note 2)
320
mW
Non-repetitive peak forward surge current
I_FSM (Note 1), (Note 3)
2
A
Junction temperature
T_j
125

Storage temperature
T_stg
-55 to 125

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Unit rating. Total rating = Unit rating × 70 %
Note 2: Device mounted on a 25.4 mm × 25.4 mm × 1.6 mm FR-4 glass epoxy board (Cu pad: 0.42 mm² × 3)
Note 3: Measured with a 10 ms pulse.
©2015 Toshiba Corporation
1
Start of commercial production
2014-12
2015-11-26
Rev.2.0