TB7101F Datasheet, PDF (1/17 Pages) Toshiba Semiconductor – Step-down DC-DC Converter IC

TB7101F(T5L1.2,F) , TB7101F(T5L1.5,F)
TB7101F(T5L1.8,F) , TB7101F(T5L2.5,F)
TB7101F(T5L3.3,F)
Toshiba BiCD Integrated Circuit Silicon Monolithic
TB7101F(T5L1.2,F) , TB7101F(T5L1.5,F)
TB7101F(T5L1.8,F) , TB7101F(T5L2.5,F)
TB7101F(T5L3.3,F)
Step-down DC-DC Converter IC
The TB7101F is a single-chip step-down DC-DC converter IC.
Equipped with a built-in high-speed and low on-resistance power
MOSFET, and utilizing a synchronous rectifier circuit, this IC can
achieve high efficiency.
Features
• Capable of high current drive (I_OUT = maximum of 1 A), using
only a few external components.
• Operating voltage (V_IN) range: 2.7 to 5.5 V.
• Fixed output voltage : V_OUT = 1.2V / 1.5V / 1.8V / 2.5V / 3.3V(typ.)
SON8-P-0303-0.65A
Weight : 0.017 g (typ.)
• High oscillation frequency of 1 MHz (typ.), making it possible to use small external components.
• Uses internal phase compensation, achieving high efficiency using only an inductor and two capacitors.
• Built-in current mode architecture with excellent fast load response.
• A small surface-mount type ceramic capacitor can be used as an output smoothing capacitor.
• Housed in a small surface-mount package (PS-8) with a low thermal resistance.
• Built-in undervoltage lock out (U.V.L.O), heatprotection, and overcurrent protection.
Marking (Note 1)/Pin Assignment
Type
Output Type name
voltage(V)
TB7101F(T5L1.2,F)
1.2
TB7101F(T5L1.5,F)
1.5
TB7101F(T5L1.8,F)
1.8
TB7101F(T5L2.5,F)
2.5
TB7101F(T5L3.3,F)
3.3
7101A
7101B
7101C
7101D
7101E
8765
1234
Type name
Lot No.
1 : PGND
2 : V_IN
3 : EN
4 : SGND
5 : N.C.
6 : N.C.
7 : V_OUT
8 : L_X
Note 1: ● on the lower left of the marking indicates Pin 1.
* The Lot number comprises three numerals. The first numeral represents the last digit of the year of
manufacture, and the following two digits indicate the week of manufacture, beginning with 01 and continuing to
either 52 or 53.
Manufacturing week Code
(The first week of the year is 01, continuing up to 52 or 53)
Manufacturing year Code
(Last digit of the year of manufacture)
Due to its MOS structure, this product is sensitive to electrostatic discharge. Handle with care.
1
2007-09-06