TB31296FT Datasheet, PDF (1/9 Pages) Toshiba Semiconductor – Bluetooth RF IC

Preliminary
TB31296FT
TOSHIBA SiGe-BiCMOS LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC
TB31296FT
Bluetooth RF IC
FEATURES
BlueRF RXMODE1
Power Consumption TX mode 27.0mA (Typ.)
RX mode 42.0mA (Typ.)
Operating Voltage Range 2.7V ~ 3.5 V
Small Package FBGA 48in
Build-in LNA
Build-in VCO
Build-in PA 0dBm output ( typ. controllable)
External PA control voltage supply for Class1
Very slight current consumption in Deep Sleep mode
BLOCK DIAGRAM
PA_CONT GNDTX1 TXout
VccTX
RXin GNDRXPA1 MIX_C MIXout
ANTSW ANTSWX GNDTX2
NC
LFIL1
DA
VccVCO C
VccRX GNDRXPA2
LNA
PLL
MIX
NC
VccIF1
Iref1
IFref2
GNDVCO ResetX
LD
NC
Doubler
VCO
TXLPF
FLLLPF
BPF
FLLRC
RSSI
LPF
FLLGC
DET
GNDIF1
AFout
Serial data cont.
BSX
VccPLL
ADC
GNDIF2
Cin
XOin
GNDPLL2 SSTB
SDATA
RFbus1
RFbus2
PASW
LFIL2
XOout
Vdd
SCLK GNDPLL1 Cout
BB13M
RSSI
VccIF2
(Top View)
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-The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
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implication or otherwise under any patent or patent rights of TOSHIBA or others.
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can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when
utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product
could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most
recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor
Reliability Handbook.
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June 26, 2003 -