TB31262F Datasheet, PDF (1/26 Pages) Toshiba Semiconductor – TOSHIBA Bi- CMOS Integrated Circuit Silicon Monolithic

TOSHIBA Bi CMOS Integrated Circuit Silicon Monolithic
TB31262F
RF 1chip IC for 900 MHz Cordless Telephone
TB31262F
One package involve three systems about RF, IF, and AF.
Involving LNA, MIX, PA, VCO (TX,RX), PLL, IF-AMP, Detecter,
Compander,and 4 useful audio amplifiers. It is possible to reduce
many external parts. This IC is suitable for ISM 900 MHz
cordless telephone.
Features
• Same system & software almost compatible as TB31261AF
(Single Conversion, IF Frequency: 10.7 MHz,)
• Built-in LNA
• Built-in 1’st MIX
→ Double Balanced MIX (DBM) Type.
• Built-in Differential VCO, Variable capacitor (TX, RX) and
Doubler (450 MHz × 2)
• Built-in PA
• A substitution from TB31261AF is easy
(Same package, Software almost compatible)
• Low operating voltage: V CC = 2.0~5.0 V
• Current operating current: ICC = 70 mA (All On)
• PLL operating frequency :around 450 MHz
• Serial control for all status
• Built in pre-amp, receiver-amp, mic-amp, and spl-amp
• Receiver output Level adjustment.
• Variable battery alarm setting. (7 thresholds)
• Built in battery saving function for Intermittent receiving.
• Small package: QFP52pin (0.65 mm pitch)
Handle with care to prevent devices from deterioration by static electricity.
1
2001-12-26