TA8258HQ Datasheet, PDF (1/12 Pages) Toshiba Semiconductor – Dual Audio Power Amplifier

TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
TA8258HQ
TA8258HQ
Dual Audio Power Amplifier
The TA8258HQ is dual audio power amplifier for consumer
applications.
This IC provides an output power of 20 watts per channel
(at VCC = 37 V, f = 1kHz, THD = 10%, RL = 8 Ω).
It is suitable for power amplifier of music center.
Features
• High output power: Pout = 20 W/channel (Typ.)
Weight: 4.04 g (typ.)
(VCC = 37 V, RL = 8 Ω, f = 1 kHz, THD = 10%)
• Low noise: Vno = 0.14 mVrms (Typ.)
(VCC = 37 V, RL = 8 Ω, GV = 34dB, Rg = 10 kΩ, BW = 20 Hz~20 kHz)
• Very few external parts.
• Built in audio muting circuit.
• Built in thermal shut down protector circuit.
• Built in output shifted to GND protection circuit. (AC short)
• Available for using same PCB layout with: TA8200AH, TA8211AH, TA8216H
• Operation supply voltage range (Ta = 25°C)
: VCC (opr) = 15~42 V
The TA8258HQ is plated with lead-free lead finishes, but the silicon pellet is attached to a heatsink with
lead-containing solder paste.
About solderability, following conditions were confirmed
• Solderability
(1) Use of Sn-63Pb solder Bath
· solder bath temperature = 230°C
· dipping time = 5seconds
· the number of times = once
· use of R-type flux
(2) Use of Sn-3.0Ag-0.5Cu solder Bath
· solder bath temperature = 245°C
· dipping time = 5seconds
· the number of times = once
· use of R-type flux
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2004-04-06