TA4500F Datasheet, PDF (1/12 Pages) Toshiba Semiconductor – 1.9 GHz Band RX Front-End IC

TOSHIBA Bipolar Linear Integrated Circuit SiGe Monolithic
TA4500F
1.9 GHz Band RX Front-End IC
PHS, Digital Cordless Telecommunication Applications
TA4500F
Features
• Low-noise amplifier / down-conversion mixer
• Integrated local buffer amplifier
• Single positive power supply: V_CC = 3.0 V
• Large conversion gain: G_LNA = 17.5 dB (typ.)
• High input IP3:
G_MIX = 5.0 dB (typ.)
IIP3_LNA = -7.5 dBmW (typ.)
IIP3_MIX = 7.0 dBmW (typ.)
• High 1/2 IF reduction ratio: 1/2IFR_MIX = 45 dB (typ.)
• Small package: QS16 (2.5 mm × 2.5 mm × 0.55 mm)
QS16
Weight: 0.0065 g (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Supply voltage
Input power
Power dissipation
Operating temperature range
Storage temperature range
V_CC (Note 1)
P_IN (RF_IN)
P_IN (LO_IN)
P_IN (MIX_IN)
P_d (Note 2)
Topr
Tstg
4.5
10
0
0
500
−40 to +85
−55 to +150
V
dBmW
dBmW
dBmW
mW
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: VCC = VCC1 = VCC2 = VCC3
Note 2: When mounted on a 30 mm × 35 mm × 0.6 mm FR4 substrate at Ta = 25°C (double-sided substrate: the
reverse side is ground connection)
Caution
This device is sensitive to electrostatic discharge. When handling this product, ensure that the environment is protected
against electrostatic discharge by using an earth strap, a conductive mat and an ionizer.
1
2007-11-01