TA4019F_07 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – UHF Wide Band Amplifier Applications

TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
TA4019F
UHF Wide Band Amplifier Applications
TA4019F
Features
• High gain: |S21|² = 30dB (@45 MHz)
• Low distortion: IM3 = 53dB (@45 MHz)
• Operating supply voltage: V_CC = 4.75 V~5.25 V
Absolute Maximum Ratings (Ta = 25°C)
Weight: 0.02g (typ.)
Characteristics
Symbol
Rating
Unit
Supply voltage
Total power dissipation
Operating temperature
Storage temperature
V_CC
5.5
V
P_D (Note 1)
550
mW
T_opr
−40~85
°C
T_stg
−55~150
°C
Note:
Note 1:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
When mounted on the glass epoxy 2.5cm² × 0.4 t
Pin Assignment
V_CC GND OUT OUT
(1) (2)
8765
4019F
12 34
IN (1)IN (2)MGC MGC
(1) (2)
1
2007-11-01