TA4017FT_07 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – VHF Wide Band Amplifier Applications

TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
TA4017FT
TA4017FT
VHF Wide Band Amplifier Applications
Features
• High gain: |S21|2 = 13dB (@45 MHz)
• Low distortion: IM3 = 42dB (@45 MHz)
• Operating supply voltage: V_CC = 4.75 V~5.25 V
Absolute Maximum Ratings (Ta = 25°C)
Weight: 0.0045g (typ.)
Characteristics
Symbol
Rating
Unit
Supply voltage
Total power dissipation
Operating temperature
Storage temperature
V_CC
5.5
V
P_D (Note 1)
300
mW
T_opr
−40 to 85
°C
T_stg
−55 to 150
°C
Note:
Note 1:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
When mounted on the glass epoxy of 2.5 cm² × 1.6 t
Pin Assignment
OUT GND OUT
(1)
(2)
654
U5
123
IN (1) IN (2) V_CC
1
2007-11-01