TA4015FE_07 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Use for Crystal Oscillators

TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
TA4015FE
TA4015FE Use for Crystal Oscillators
TA4015FE
Features
• Bias resistors, a transistor for oscillation and a transistor for
buffer are packed in one package; hence, TA4015FT can easily
compose a crystal oscillator.
• TA4015FE comes with a 6-pin thin ultra-compact package
and is suitable for super-high density mounting.
Absolute Maximum Ratings (Ta = 25°C)
Weight: 0.003 g (typ.)
Characteristics
Symbol
Rating
Unit
Power supply voltage
V_CC
Circuit current
I_CC
Total power dissipation
P_D
Junction temperature
T_j
Storage temperature
T_stg
6
V
9
mA
100
mW
125
°C
−55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Circuit current
Oscillator base voltage
Oscillator emitter voltage
Buffer base voltage
Fout voltage
Symbol
I_CC
V_OSCB
V_OSCE
V_BuffB
V_Fout
Test
Circuit
Test Condition
⎯ V_CC = 3.0 V
⎯ V_CC = 3.0 V
⎯ V_CC = 3.0 V
⎯ V_CC = 3.0 V
⎯ V_CC = 3.0 V
Min Typ. Max Unit
1.10 1.32 1.52 mA
1.65 1.71 1.79
V
0.92 0.99 1.06
V
2.20 2.28 2.36
V
1.95 2.02 2.10
V
Characteristics
R1 resistance
R2 resistance
R3 resistance
R4 resistance
R5 resistance
Symbol
R₁
R₂
R₃
R₄
R₅
Typ. Unit
7.5
kΩ
6.8
kΩ
24
kΩ
820
Ω
820
Ω
1
2007-11-01