TA4014FE_07 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Use for Crystal Oscillators

TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
TA4014FE
TA4014FE
TA4014FE Use for Crystal Oscillators
Features
• Bias resistors, a transistor for oscillation and a transistor for
buffer are packed in one package; hence, TA4014FE can easily
compose a crystal oscillator.
• TA4014FE comes with a 6-pin thin ultra-compact package
(1.6 mm × 1.6 mm) and is suitable for super-high density
mounting.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Power supply voltage
Circuit current
Total power dissipation
Junction temperature
Storage temperature
Symbol
Rating
V_CC
6
I_CC
8
P_D
100
(Note 1)
T_j
125
T_stg
−55~125
Unit
V
mA
mW
(Note 1)
°C
°C
Weight: 0.003 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: When mounted on the glass epoxy board of 2.5 cm2 × 1.6 t.
Electrical Characteristics (Ta = 25°C)
Characteristics
Circuit current
Oscillator base voltage
Oscillator emitter voltage
Buffer base voltage
Fout voltage
Symbol
I_CC
V_OSCB
V_OSCE
V_BuffB
V_Fout
Test
Circuit
Test Condition
⎯ V_CC = 3.0 V
⎯ V_CC = 3.0 V
⎯ V_CC = 3.0 V
⎯ V_CC = 3.0 V
⎯ V_CC = 3.0 V
Min Typ. Max Unit
1.08 1.27 1.52 mA
1.34 1.51 1.67
V
0.69 0.79 0.88
V
2.05 2.29 2.53
V
2.03 2.26 2.52
V
Characteristics
R1 resistance
R2 resistance
R3 resistance
R4 resistance
R5 resistance
Symbol
R₁
R₂
R₃
R₄
R₅
Typ. Unit
5.6
kΩ
6.9
kΩ
15
kΩ
640
Ω
670
Ω
1
2007-11-01