TA4014FE Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Crystal Oscillators

TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
TA4014FE
TA4014FE Use for Crystal Oscillators
TA4014FE
Features
· Bias resistors, a transistor for oscillation and a transistor for
buffer are packed in one package; hence, TA4014FE can easily
compose a crystal oscillator.
· TA4014FE comes with a 6-pin thin ultra-compact package
(1.6 mm × 1.6 mm) and is suitable for super-high density
mounting.
Maximum Ratings (Ta = 25°C)
Weight: 0.003 g (typ.)
Characteristics
Symbol
Rating
Power supply voltage
Circuit current
Total power dissipation
V_CC
6
I_CC
8
P_D
100
(Note)
Junction temperature
Storage temperature
T_j
125
T_stg
-55~125
Note: When mounted on the glass epoxy board of 2.5 cm² ´ 1.6 t.
Unit
V
mA
mW
(Note)
°C
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Circuit current
Oscillator base voltage
Oscillator emitter voltage
Buffer base voltage
Fout voltage
Symbol
I_CC
V_OSCB
V_OSCE
V_BuffB
V_Fout
Test
Circuit
Test Condition
¾ V_CC = 3.0 V
¾ V_CC = 3.0 V
¾ V_CC = 3.0 V
¾ V_CC = 3.0 V
¾ V_CC = 3.0 V
Min Typ. Max Unit
1.08 1.27 1.52 mA
1.34 1.51 1.67 V
0.69 0.79 0.88 V
2.05 2.29 2.53 V
2.03 2.26 2.52 V
Characteristics
R1 resistance
R2 resistance
R3 resistance
R4 resistance
R5 resistance
Symbol
R₁
R₂
R₃
R₄
R₅
Typ. Unit
5.6 kW
6.9 kW
15
kW
640
W
670
W
1
2003-03-24