TA4012FU_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – UHF Wide Band Amplifier Applications

TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
TA4012FU
UHF Wide Band Amplifier Applications
TA4012FU
Features
z Low current: I_CC = 6.5 mA
z Wide band: f = 2.0 GHz (3dB down)
z Operatin supply voltage: V_CC = 1.5~2.2 V
Pin Assignment
Absolute Maximum Ratings (Ta = 25°C)
Weight: 0.006 g (typ.)
Characteristic
Symbol
Rating
Unit
Supply voltage 1
Supply voltage 2
Total power dissipation
Operating temperature
Storage temperature
V_CC1
2.2
V
V_CC2 (Note 1)
3
V
P_D (Note 2)
300
mW
T_opr
−40~85
°C
T_stg
−55~150
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: When V_CC is operated at less than 1/4 duty cycle.
Note 2: When mounted on the glass epoxy of 2.5 cm² × 1.6 t
Caution
This device electrostatic sensitivity. Please handle with caution.
1
2007-11-01