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SSM6P54TU Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – High-Speed Switching Applications | |||
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SSM6P54TU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM6P54TU
â High-Speed Switching Applications
â Power Management Switch Applications
⢠1.5 V drive
⢠Suitable for high-density mounting due to compact package
⢠Low on-resistance : Ron = 228 m⦠(max) (@ VGS = -2.5 V)
: Ron = 350 m⦠(max) (@ VGS = -1.8 V)
: Ron = 555 m⦠(max) (@ VGS = -1.5 V)
Absolute Maximum Ratings (Ta = 25°C)
Unit : mm
2.1±0.1
1.7±0.1
1
6
2
5
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
VDS
-20
V
VGSS
±8
V
Drain current
DC
ID
Pulse
IDP
-1.2
A
-2.4
Drain power dissipation
PD(Note 1)
500
mW
Channel temperature
Storage temperature range
Tch
150
°C
Tstg
â55 ~ 150
°C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (âHandling
Precautionsâ/âDerating Concept and Methodsâ) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1:
Mounted on an FR4 board.
(25.4 mm à 25.4 mm à 1.6 t,
Cu
Pad:
645
mm2)
Electrical Characteristics (Ta = 25°C)
3
4
1.Sorce1
2.Gate1
3.Drain2
4.Source 2
5.Gate2
6.Drain1
UF6
JEDEC
â
JEITA
â
TOSHIBA
2-2T1B
Weight: 7.0 mg (typ.)
Characteristics
Drain-Source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-Source on-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Turn-on time
Turn-off time
Total gate charge
Gate-Source charge
Gate-Drain charge
Drain-Source forward voltage
Note 2: Pulse test
Symbol
Test Condition
Min Typ. Max Unit
V (BR) DSS ID = â1 mA, VGS = 0
V (BR) DSX ID = â1 mA, VGS = +8 V
â20 â¯
â¯
V
â12 â¯
â¯
IDSS
VDS = â20 V, VGS = 0
â¯
â¯
â10
μA
IGSS
VGS = ± 8 V, VDS = 0
â¯
â¯
±1
μA
Vth
VDS = â3 V, ID = â1 mA
â0.3
â¯
â1.0
V
|Yfs|
VDS = -3 V, ID = -0.6 A
(Note 2) 1.7 3.4
â¯
S
ID = -0.6 A, VGS = -2.5 V (Note 2) â¯
162 228
RDS (ON) ID = -0.6 A, VGS = -1.8 V (Note 2) â¯
212 350 mΩ
ID = -0.1 A, VGS = -1.5 V (Note 2) â¯
249 555
Ciss
Coss
Crss
VDS = â10 V, VGS = 0
f = 1 MHz
â¯
331
â¯
â¯
48
â¯
pF
â¯
39
â¯
ton
VDD = â10 V, ID = â0.6 A
toff
VGS = 0 ~ â2.5 V, RG = 4.7 Ω
â¯
19
â¯
ns
â¯
18
â¯
Qg
Qgs
VDS = â16 V, IDS = -1.2 A,
VGS = â 4 V
Qgd
â¯
7.7
â¯
â¯
4.9
â¯
nC
â¯
2.8
â¯
VDSF
ID = 1.2 A, VGS = 0
(Note 2) â¯
0.8
1.2
V
1
2007-11-01
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