SSM6P49NU Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

SSM6P49NU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM6P49NU
Power Management Switch Applications
• 1.8V drive
• Low ON-resistance: R_DS(on) = 157 mΩ (max) (@V_GS = -1.8 V)
R_DS(on) = 76 mΩ (max) (@V_GS = -2.5 V)
R_DS(on) = 56 mΩ (max) (@V_GS = -4.5 V)
R_DS(on) = 45 mΩ (max) (@V_GS = -10V)
2.0±0.1
Unit: mm
B
A
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2
Common)
0～0.05
0.13
Characteristics
Drain-Source voltage
Symbol
V_DSS
Rating
Unit
−20
V
*BOTTOM VIEW
1
0.65 0.65
0.95
2
3
Gate-Source voltage
V_GSS
±12
V
Drain current
DC
I_D
−4.0
A
Pulse
I_DP (Note 1)
−16.0
Power dissipation (Note 2)
P_D
1
W
t < 10s
2
6
0.3±0.075
0.05 M A B
5
4
0.65±0.075 0.65±0.075
0.05 M A B
1. Source1 4. Source2
Channel temperature
Storage temperature
T_ch
150
°C
T_stg
−55 to 125
°C
UDFN6
2. Gate1 5. Gate2
3. Drain2 6. Drain1
Note: Using continuously under heavy loads (e.g. the application of
JEDEC
―
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
JEITA
TOSHIBA
―
2-1Y1A
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Weight: 8.5 mg (typ.)
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: The pulse width limited by max channel temperature.
Note 2: Total rating
Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm²)
Marking(Top View)
65 4
Equivalent Circuit(Top View)
6
5
4
Pin Condition(Top View)
D1 G2 S2
PP5
Q1
Q2
D1
D2
1 23
Polarity marking
1
2
3
S1 G1 D2
Polarity marking (on the top)
*Electrodes: on the bottom
Start of commercial production
2010-11
1
2014-03-01