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SSM6P36FE Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Power Management Switches | |||
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SSM6P36FE
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM6P36FE
â Power Management Switches
⢠1.5-V drive
⢠Low ON-resistance: Ron = 3.60 Ω (max) (@VGS = -1.5 V)
Ron = 2.70 Ω (max) (@VGS = -1.8 V)
Ron = 1.60 Ω (max) (@VGS = -2.8 V)
Ron = 1.31 Ω (max) (@VGS = -4.5 V)
1.6±0.05
1.2±0.05
Unit: mm
Absolute Maximum Ratings (Ta = 25 °C)
(Common to the Q1, Q2)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC
Pulse
Drain power dissipation
Channel temperature
Storage temperature range
VDSS
-20
V
VGSS
±8
V
ID
-330
mA
IDP
-660
PD (Note1)
150
mW
Tch
150
°C
Tstg
â55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (âHandling
Precautionsâ/âDerating Concept and Methodsâ) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Total rating
Mounted on an FR4 board
(25.4 mm à 25.4 mm à 1.6 mm, Cu Pad: 0.135 mm2 à 6)
1
6
2
5
3
4
ES6
1.Source1
2.Gate1
3.Drain2
4.Source2
5.Gate2
6.Drain1
JEDEC
â
JEITA
â
TOSHIBA
2-2N1D
Weight: 3.0 mg (typ.)
Marking
6
5
4
Equivalent Circuit (top view)
6
5
4
PX
Q1
Q2
1
2
3
1
2
3
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is
protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come
into direct contact with devices should be made of anti-static materials.
Usage Considerations
Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (â1 mA for the
SSM6P36FE). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than
Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on).
Take this into consideration when using the device.
1
2008-06-05
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