SSM6P16FU Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High Speed Switching Applications

SSM6P16FU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM6P16FU
High Speed Switching Applications
Analog Switch Applications
• Small package
• Low on-resistance
: R_on = 8 Ω (max) (@V_GS = −4 V)
: R_on = 12 Ω (max) (@V_GS = −2.5 V)
: R_on = 45 Ω (max) (@V_GS = −1.5 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V_DS
−20
V
Gate-Source voltage
V_GSS
±10
V
DC
I_D
Drain current
Pulse
I_DP
Drain power dissipation (Ta = 25°C)
P_D
−100
mA
−200
200
mW
1: Source1
2: Gate1
3: Drain2
4: Source2
Channel temperature
Storage temperature range
T_ch
150
°C
T_stg
−55~150
°C
5: Gate2
6: Drain1
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEITA
―
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-2J1C
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
Weight: 6.8 mg (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Equivalent Circuit (top view)
6
5
4
6
5
4
DT
Q1
Q2
1
2
3
1
2
3
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is
protected against static electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
1
2007-11-01