SSM6N7002FU Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High Speed Switching Applications Analog Switch Applications

SSM6N7002FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N7002FU
High Speed Switching Applications
Analog Switch Applications
Unit: mm
• Small package
• Low ON resistance : R_on = 3.3 Ω (max) (@V_GS = 4.5 V)
: R_on = 3.2 Ω (max) (@V_GS = 5 V)
: R_on = 3.0 Ω (max) (@V_GS = 10 V)
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V_DS
60
V
Gate-Source voltage
V_GSS
± 20
V
Drain current
DC
Pulse
I_D
200
mA
I_DP
800
Drain power dissipation (Ta = 25°C)
P_D (Note)
300
mW
Channel temperature
T_ch
150
°C
Storage temperature range
T_stg
−55~150
°C
Note: Total rating, mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32mm² × 6)
0.4 mm
1.SOURCE1 4.SOURCE2
2.GATE1 5.GATE2
3.DRAIN2 6.DRAIN1
JEDEC
JEITA
TOSHIBA
―
―
2-2J1C
Marking
6
5
4
Equivalent Circuit (top view)
6
5
4
NC
Q1
Q2
1
2
3
1
2
3
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
1
2004-05-07